ace 7433 m p - channel 30 - v mosfet ver 1.1 1 d escription the ace7433 m uses advanced trench technology to provide excellent r ds(on) , low gate charge. this device is suitable for use as a high side switch in smps and general purpose applications. features ? low r ds(on) trench technology ? low thermal i mpedance ? fast switching speed applications ? white led boost converters ? automotive systems ? industrial dc/dc conversion circuits absolute maximum ratings p arameter s ymbol limit u nit s drain - source voltage v ds - 3 0 v gate - source voltage v gs 20 v contin uous drain current a t a =25 o c i d - 20 a t a =70 o c - 16 pulse drain current b i dm - 50 continuous drain current (diode continuous) a i s - 7.3 a power dissipation a t a =25 o c p d 5 w t a =70 o c 3.2 operating junction and storage temperature range t j, t stg - 55 to 150 o c parameter symbol max imum units maximum junction - to - ambient a t Q 10s r ja 25 /w steady state 65 /w notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature
ace 7433 m p - channel 30 - v mosfet ver 1.1 2 packaging type dfn 5*6 - 8l ordering i nformation ace7433 m pn + h p n : df n 5 * 6 - 8l pb - free halogen - free
ace 7433 m p - channel 30 - v mosfet ver 1.1 3 electrical characteristics t a =2 5 o c un less otherwise noted parameter symbol conditions min. typ. max. unit static gate source threshold voltage v gs(th) v ds =v gs , i d = - 250ua - 1 v gate body leakage i gss v ds = 0 v, v gs = 20 v 100 n a zero gate voltage drain current i dss v ds = - 24 v, v gs = 0 v - 1 ua v ds = - 24 v, v gs = 0 v , t j =55 - 25 on - state drain - current a i d (on) v ds = - 5 v, v gs = - 1 0 v - 30 a static drain - source on - resistance a r ds(on) v gs = - 10 v ,i d = - 15.3a 9 m v gs = - 4.5v,i d = - 12.3a 13 forward transconductance a g f s v gs = - 15 v ,i d = - 15 .3 a 34 s diode forward voltage a v sd i s = - 3.7 a , v gs = 0 v - 0.72 v dynamic b total gate charge q g v ds = - 15v, v gs = - 4.5 v , i d = - 15.3a 140 nc gate - source charge q gs 35 gate - drain charge q gd 62 turn - on delay time t d(on) v d s = - 15v, ,r l =0.9 i d = - 15.3a , v g s = - 10v r g en = 6 , 18 ns rise time t f 87 turn - off delay time t d(off) 345 fall time t f 226 input capacitance c iss v ds = - 1 5 v, v gs =0v f= 1m hz 8500 pf output capacitance c oss 1291 reverse transfer capacitance c rss 939 note: a. pulse test: pw <= 300us duty cycle <= 2%. b . guaranteed by design, not subject to production testing .
ace 7433 m p - channel 30 - v mosfet ver 1.1 4 typical performance characteristics id - drain current (a) v gs - gate - to - source voltage (v) 1. on - resistance vs. drain current 2. trans fer characteristics v gs - gate - to - source voltage (v) vsd - source - to - drain voltage (v) 3. on - resistance vs. gate - to - source voltage 4. drain - to - source forward voltage vd s - drain - to - source voltage (v) vds - drain - to - source voltage (v) 5. output characteristics 6. capacitance
ace 7433 m p - channel 30 - v mosfet ver 1.1 5 typical performance characteristics qg - total gate charge (nc) tj - junctiontemperature(c) 7. g ate charge 8. normalized on - resistance vs junction temperature vds drain to source voltage (v) t1 time (sec) 9. safe operating area 10. single pulse maximum power di ssipation t1 time (sec) 11. normalized thermal transient junction to ambient
ace 7433 m p - channel 30 - v mosfet ver 1.1 6 packing information dfn 5*6 - 8 l symbols dimensions in millimeters diensions in inches min nom max min nom max a 0.85 0.95 1.00 0.033 0.037 0.039 a1 0.00 0.05 0.000 0.002 b 0.30 0.40 0.50 0.012 0.016 0.020 c 0.15 0.20 0.25 0.006 0.008 0.010 d 5.20 bsc 0.205 bsc d1 4.35 bsc 0.171 bsc e 5.55 bsc 0.219 bsc e1 6.05 bsc 0.238 bsc e2 3.62 bsc 0.143 bsc e 1.27 bsc 0.050 bsc l 0.45 0.55 0.65 0. 018 0.022 0.026 l1 0 0.15 0 0.006 l2 0.68 ref 0.027 ref 0 o 10 o 0 o 10 o
ace 7433 m p - channel 30 - v mosfet ver 1.1 7 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause t he failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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